New generation memory material has a new breakthrough

New generation memory material has a new breakthrough

tenco 2019-05-24

New generation memory material has a new breakthrough!A team of researchers from the department of physics at national Taiwan chenggong university recently published a study of bismuth ferrite manipulation in a leading international journal, Nature Materials, earlier this month.

The research team expects that the development of artificial intelligence and cloud computing will not only reduce the delay time of reading data, but also greatly accelerate the speed of calculation, which is expected to bring a revolutionary breakthrough in the future trend of miniaturization of multi-functional nano-components.

According to the research data, bismuth ferrite (BiFeO3) is a multi-bit memory material that can simultaneously have up to 8 logical states (0-7) in a storage unit. Compared with the conventional unit memory that can only store 0 and 1, it can greatly improve the density of stored information.

The team has developed a novel optical technology that allows for non-contact control of the material's properties.

The combination of the traditional hard disk and the basic unit of the memory is 0 and 1. Limited by this, the basic storage unit can only improve the memory density by constantly reducing the size of components, and will always reach the limit in development.

Chen yijun, a professor with cheng da's team, pointed out that the traditional hard disk with magnetic metal film as the main material, for example, has only one ferromagnetic order, which is used to record the information of 0 and 1.And multiferroic materials for material in the storage unit of ferrite bismuth spontaneous electric dipole moment and the orientation of electron spin, storage unit can reach nanoscale, theoretically exist multiple storage state and at the same point, which includes electric, magnetic and antiferromagnetic ordered at the same time, the combination can be a record eight group information in a single storage unit.

She points out that polyferroic materials are in a more stable state of storage than today's commercial nonvolatile memory, which still loses data after a power outage for a long time.

The most important breakthrough of the research team of chengda university is to endow the material with the advantage of all-optical control. Because light is an alternating electromagnetic wave, light cannot produce multi-configuration storage and modulation of the material in traditional experience.

Yang zhanqi, assistant professor of the research team, also said that the key light control technology proposed by the team can control the multi-element storage configuration in bismuth ferrite by utilizing the local deformation generated by light.Using optical writing technique of the memory without any use any metal electrodes and the complex process of components, fully embodies the ideas of "material element", not only improve the benefit of information storage, as well as a new generation of memory development brings a new way of thinking, make the material can be directly imported such as quantum storage, quantum communication, interdisciplinary science and technology combined with advanced optical technology.